There are currently two different approaches to fabricating graphene devices: mechanical exfoliation, in which graphene flakes are stripped from a piece of graphite; and epitaxial growth, in which graphene is formed by heating e.g. silicon carbide surfaces. Mechanical exfoliation produces high-quality samples, but has a major disadvantage: it only produces small devices (up to 100µm x 100µm); and it is not easily adaptable for commercial-scale production of graphene. Epitaxial growth and other new techniques which are being developed do not suffer from this drawback. In this project we will develop new methods for the epitaxial growth of large-area graphene.