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Geometry and electronic band structure of GaAs(110)-Bi(1 ML)
A Umerski and G. P. Srivastava
Phys. Rev. B 47, 8450-8453 (1993).
A robust method of calculating surface atomic geometry
A Umerski and G. P. Srivastava
Surf. Sci. 307-309, 680-684 (1994).
Calculated electronic band structures of III-V semiconductors with metallic overlayers
A Umerski and G. P. Srivastava
Surf. Sci. 307-309, 963-968 (1994).
Atomic geometry for III-V semiconductors with Bi overlayers
A Umerski and G. P. Srivastava
Surf. Rev. Lett. 1, 495-499 (1994)
Electronic band structures of InAs(110) and InAs(110)Bi(1 ML)
A Umerski and G. P. Srivastava
Surf. Rev. Lett. 1, 681-684 (1994).
Geometry and electronic structure of Se treated InP(110)
A Umerski and G. P. Srivastava
Surf. Sci. 331-333, 590-593 (1995).
Geometry and electronic band structure of an ordered monolayer deposition of Bi on III-V(110) semiconductor surfaces
A Umerski and G. P. Srivastava
Phys. Rev. B 51, 2334-2344 (1995)
Forward to Professor G. P. Srivastava publications by Usanmaz, D. (4 publications).