Professor G. P. Srivastava publications in 1996

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Phonon dispersion on a GaAs(110) surface studied using the adiabatic bond charge model
H. M. Tütüncü and G. P. Srivastava
J. Phys.: Condens. Matter 8, 1345-1358 (1996)

Phonons at III-V(110) surfaces
W G Schmidt, F Bechstedt and G. P. Srivastava
Surf. Sci. 352-354, 83-88 (1996)

Density functional and quasiparticle calculations on the InP(110) surface
S. J. Jenkins, G. P. Srivastava and J. C. Inkson
Surf. Sci. 352-354, 776 (1996).
  Abstract

Bonding and structure of the Si(001)(2x1)-Sb surface
S. J. Jenkins and G. P. Srivastava
Surf. Sci. 352-354, 411-415 (1996).
  Abstract

Theoretical studies of the GaAs(001)-Ge(2x1) and (1x2) structures
G. P. Srivastava and S. J. Jenkins
Surf. Sci. 352-354, 416 (1996).
  Abstract

Atomic geometry and bonding of the GaAs(001)-beta₂(2x4) surface from ab initio pseudopotential calculations
G. P. Srivastava and S. J. Jenkins
Phys. Rev. B 53, 12589-12592 (1996).
  Abstract

Surface phonons on InP(110) with the adiabatic bond charge model
H. M. Tütüncü and G. P. Srivastava
Phys. Rev. B 53, 15675-15681 (1996)

Theoretical evidence concerning mixed dimer growth on the Si(001)(2x1)-Ge surface
S. J. Jenkins and G. P. Srivastava
J. Phys.: Condens. Matter 8, 6641-6651 (1996)
  Abstract

Adsorption of group V elements on III-V(110) surfaces
W G Schmidt, F Bechstedt and G. P. Srivastava
Surf. Sci. Rep. 141-224, 25 (1996)

Surface dynamics of InP(110) and GaP(110) with the adiabatic bond charge model
H. M. Tütüncü and G. P. Srivastava
Proc 23nd Int Conf on Phys of Semicond (Berlin) Vol 2, 859-862 (Eds M Scheffler and R Zimmermann; publ World Scietific, Singapore, 1996)

Microscopic calculation of valence-band states in semiconductor structures in the presence of a magnetic field
W. -C. Tan, J. C. Inkson and G. P. Srivastava
Phys. Rev. B 54 14623 (1996)

Forward to Professor G. P. Srivastava publications in 1995 (12 publications).