| Time |
Speaker |
Subject |
| 11:00 | 11:45 |
José Coutinho |
Oxygen defects in silicon and germanium |
| 11:45 | 12:15 |
Jonathan Goss |
Hydrogen in diamond |
| 12:15 | 12:45 |
Christopher Latham |
Carbon in compound semiconductors |
| 12:45 | 14:00 |
|
Lunch |
| 14:00 | 14:30 |
Ron Newman |
Carbon defects in InP |
| 14:30 | 15:00 |
James Coomer |
Interstitial and vacancy defects in Si and diamond |
| 15:00 | 15:30 |
Ben Hourahine |
Carbon-hydrogen defects in silicon |
| 15:30 | 16:00 |
Markus Kaukonen |
Vacancy-tin defects in silicon |
| 16:00 | 16:30 |
Caspar Fall |
Magnesium-hydrogen and hydrogen in GaN |
| 16:30 | 17:00 |
Stefan Birner |
Interstitials in germanium |
| 17:00 | 17:30 |
Pat Briddon |
News from Newcastle |
| 17:30 | 18:00 |
|
Discussion |