Crystal structure

There is a separate page discussing diamond's crystal structure.

Mechanical and thermal properties

Property Value [ref.]
Crystal structure Diamond (cubic)
Space group: Fd3m
Pearson Symbol: cF8
Strukturbericht Designation: A4
Lattice parameter (300 K) 3.56683 Å [1,2,4]
6.74033 a.u. [1,2,4]
3.5597 Å [10]
6.7269 a.u. [10]
Bond length (300 K) 1.5445 Å [2]
2.9187 a.u. [2]
Bond angle (the tetrahedral angle) 2×tan-1(√2)
1.9106332362... rads.
109.47122063...°
Packing fraction (√3)×π/16
0.34008738...
Relative hardness 10 Mohs [exact]
Knoop hardness 8000 [10]
Knoop microhardness
(100) face
(110), (111) faces		 79 GPa [10]
56–102 GPa [10]
58–88 GPa [10]
Vickers microhardness:
(100) face
(111) face
88–147 GPa [10]
98 GPa [10]
Abrasive hardness 140,000 [10]
Modulus of elasticity 700–1200 GPa [10]
Young's modulus ([111] direction) 1223 GPa [11]
Volume compressibility 18×10-10 m2 N-1 [10]
Compressive yield strength 8680–16530 MPa [10]
Poisson's ratio 0.1–0.29 [10]
Atomic weight of C 12.0107(8) u (a.m.u.) [6]
1.9944(1)×10-26 kg [6]
Mass of 12C atom 12 u  (a.m.u.) [exact]
1.992648×10-26 kg
Density (300 K) 3515.25 kg m-3 [1]
Atomic concentration (300 K) 1.763×1023 cm-3 [2]
Bulk modulus 442.3 GPa [3]
Linear expansion coefficient (300 K) 1.05×10-6 K-1 [2]
Melting point 3773 K [2]
4027 °C [10]
3850 K [12]
Coefficient of (linear) thermal expansion (20 °C) 1.18 µm m°C-1 [10]
Heat capacity 0.4715 J g-1 °C-1 [10]
Thermal conductivity:
(Type-I, 300 K)
(Type-IIa, 300 K)
(Type-IIb, 300 K)
—
895 W m-1 K-1 [12]
2300 W m-1 K-1 [12]
1350 W m-1 K-1 [12]
2000 W m-1 K-1 [4,10]
Heat of formation 714.4 kJ mol-1 [10]
Debye temperature 2067 °C [10]
Raman frequency (first order) ∼1332 cm-1 [7,8]

Optical and electronic properties

Property Value [ref.]
Refractive index:
(546.1 nm)
(589 nm)
(591 nm)
(visible light range)
2.424 [2]
2.419 [10]
2.41 [7]
∼2.40–2.46 [9]
Dielectric constant:
(300 K, 1–10 kHz)
(25 °C, 1 MHz)
5.70 [2]
5.5–5.7 [10]
Dielectric strength 1000 kV mm-1 [10]
Dissipation factor 0.0002 [10]
Nature of band-gap Indirect
Electronic band-gap (0 K) 5.48 eV [4]
Electronic band-gap (300 K) 5.50 eV [1]
5.47 eV [4,5]
Electron mobility (300 K)
(high-purity single-crystal CVD)		 1800 cm2 V-1 s-1 [4]
4500 cm2 V-1 s-1 [13]
Hole mobility (300 K)
(high-purity single-crystal CVD)		 1200 cm2 V-1 s-1 [4]
3800 cm2 V-1 s-1 [13]
Relative permittivity 5.570 [1]

References

  1. Physics of Semiconductors and Their Heterostructures, Jasprit Singh, McGraw-Hill, New York (1993)
  2. D. W. Palmer, www.semiconductors.co.uk, 2003.04
  3. H. J. McSkimin and P. Andreatch, Jr., J. Appl. Phys. 43 (7), 2944–2948 (1972)
  4. Physics of Semiconductor Devices, 2nd Edition, S. M. Sze, John Wiley & Sons, New York (1981)
  5. S. Koizumi, invited review presented at the conference: The Physics of Group-IV Semiconductors, University of Exeter, U.K., 7th–10th April 2003
  6. IUPAC, http://www.chem.qmul.ac.uk/iupac/
  7. Synthetic Diamond — Emerging CVD Science and Technology, Spear and Dismukes, Wiley, New York (1994)
  8. S. A. Solin and K. Ramdas, Phys. Rev. B 1, 1687 (1970)
  9. Edwards, D. F. and Philipp, H. R. in HOC-I, pg. 665
  10. MatWeb, http://www.matweb.com/
  11. Wang, S.-F. et al., Mater. Chem. Phys. 85 (2–3), 432–437 (2004)
  12. CRC Handbook of Chemistry and Physics, 75th Edition, David R. Lide, CRC Press, Inc., Boca Raton (1994)
  13. J. Isberg, J. Hammersberg, E. Johansson, T. Wikström, D. J. Twitchen, A. J. Whitehead, S. E. Coe, and G. A. Scarsbrook, Science 297, 1670–1672 (2002)

Updates

Note that the latest versions of these tables can now be found on an external page about diamond material data.

Acknowledgements

My thanks go to Jon Goss and Derek Palmer for their help in providing data for this page.